GaN-Based Metal-Oxide-Semiconductor Devices

Book Description

The GaN-based semiconductors are potentially suitable materials for optoelectronic and electronic applications. Among various GaN-based electronic devices investigated, the MOS devices show potentially higher operating frequency, large output power gain, and better thermal stability, in comparison with the well developed Si-based MOS devices. Various deposition methods, which have been used to deposit oxides or insulators on GaN-based semiconductors to fabricate MOS devices, are summarized. The resultant devices demonstrate promising performances. In particular, the newly developed photoelectrochemical (PEC) oxidation method has aroused increasing interests due to its intrinsic advantage in producing high quality oxide/semiconductor interface over the other conventional deposition methods. It is expected that with the progress in dielectric deposition techniques, in combination with...

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